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US 7,843,018 B2Granted
Transistor providing different threshold voltages and method of fabrication thereof
AssigneeSuVolta, Inc.
InventorSung-Ki Min
Life of this patent
Estimating the term…
Abstract
A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.
Claims19
A transistor, comprising:
- a source region formed in a semiconductor substrate;
- a drain region formed in the semiconductor substrate and spaced apart from the source region;
- and
- a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth and a second portion with a second depth different than the first depth, wherein the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth such that the second portion has a different threshold voltage than the first portion.
1 more element
A transistor, comprising:
- a source region formed in a semiconductor substrate;
- a drain region formed in the semiconductor substrate and spaced apart from the source region;
- and
- a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth and a second portion with a second depth different than the first depth, wherein:
- the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth;
- the second portion has a higher threshold voltage than the first portion;
- and
- the second portion has a smaller length than the first portion.
5 more elements
A transistor, comprising:
- a source region formed in a semiconductor substrate;
- a drain region formed in the semiconductor substrate and spaced apart from the source region;
- and
- a channel region formed in the semiconductor substrate between the source region and the drain region, the channel region having a first portion with a first depth, a second portion with a second depth different than the first depth, and a third portion, wherein the first portion has an amount of dopant at the first depth and the second portion has approximately the same amount of the dopant at the second depth, and the first portion has a different threshold voltage than the second portion and the third portion.
1 more element
Dependencies are inferred from the claim text.