Electrostatic discharge protection device for an integrated circuit
AssigneeSTMicroelectronics S.r.l.
InventorsJohn Brunel, Nicolas Froidevaux
Life of this patent
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Abstract
An integrated circuit is made of a semiconductor material and comprises an input and/or terminal connected to an output transistor forming a parasitic element capable of triggering itself under the effect of an electrostatic discharge applied to the terminal. The integrated circuit comprises a protection device formed so as to be biased at the same time as the parasitic element under the effect of an electrostatic discharge, and more than the parasitic element to evacuate a discharge current as a priority.
Claims25
An integrated circuit formed in a semiconductor material comprising:
- a protected terminal;
- a transistor connected to the protected terminal and forming a parasitic element capable of triggering itself under an effect of an electrostatic discharge applied to the protected terminal;
- and
- a protection device formed so as to be biased at the same time as the parasitic element under the effect of the electrostatic discharge, the protection device being positioned to channel an electrostatic discharge current more readily than the parasitic element.
A method comprising:
- forming an integrated circuit in a semiconductor material including an transistor connected to a protected terminal and a parasitic element capable of triggering itself under an effect of an electrostatic discharge applied to the protected terminal;
- forming in the semiconductor material a protection device connected to the protected terminal;
- and
- channeling an electrostatic discharge current through the protection device more than through the parasitic element.
An integrated circuit formed in a semiconductor, the integrated circuit comprising:
- a transistor;
- a protected terminal connected to the transistor;
- a parasitic element connected to the protected terminal;
- a bias connection coupled to a control terminal of the parasitic element;
- and
- an electrostatic discharge protection device connected to the protected terminal and located in the semiconductor further from the bias connection than the parasitic element is from the bias connection.
Dependencies are inferred from the claim text.