Semiconductor device having multiple fin heights
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chen-Nan Yeh, Yu-Rung Hsu
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Abstract
A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.
Claims13
A semiconductor device comprising:
- a substrate comprising bulk semiconductor material;
- a first group of trenches in the substrate, the first group of trenches having a first depth, portions of the substrate between adjacent trenches of the first group of trenches forming one or more first fins;
- a second group of trenches in the substrate, the second group of trenches having a second depth, portions of the substrate between adjacent trenches of the second group of trenches forming one or more second fins, the second depth being substantially the same as the first depth;
- a first dielectric layer along a bottom of each of the first group of trenches;
- and
- a second dielectric layer along a bottom of each of the second group of trenches, the second dielectric layer having a thickness different than the thickness of the first dielectric layer.
Dependencies are inferred from the claim text.