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US 7,842,990 B2Granted
Nonvolatile ferroelectric memory device including trench capacitor
AssigneeHynix Semiconductor Inc.
InventorHee Bok Kang
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Abstract
A nonvolatile ferroelectric memory device includes a plurality of unit cells. Each of the unit cells includes a cell capacitor and a cell transistor. The cell capacitor includes a storage node, a ferroelectric layer, and a plate line. The cell capacitors of more than one of the plurality of unit cells are provided in a trench.
Claims5
A nonvolatile ferroelectric memory device, comprising:
- a first insulating film including a plurality of contact nodes;
- a trench for exposing the plurality of contact nodes by etching a second insulating film formed on an upper portion of the first insulating film;
- a plurality of storage nodes formed on an inner surface of the trench and being in contact with the plurality of contact nodes exposed at a bottom of the trench;
- and
- a ferroelectric layer and a plate line sequentially formed over the plurality of storage nodes.
2 more elements
Dependencies are inferred from the claim text.