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US 7,842,971 B2Granted
Silicon-controlled rectifier (SCR) device for high-voltage electrostatic discharge (ESD) applications
AssigneesIntersil Americas Inc., University of Central Florida Research Foundation, Inc.
InventorsZhiwei Liu, Juin J. Liou, James E. Vinson
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Abstract
A silicon-controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.
Claims12
A semiconductor device, comprising:
- a PNP bipolar transistor comprising an emitter formed in a PNP emitter area, wherein the PNP emitter area comprises:
- at least two separate segments having a p-type conductivity;
- at least two separate segments having an n-type conductivity;
- and
- an NPN bipolar transistor comprising an emitter formed in an NPN emitter area, wherein the NPN emitter area comprises:
- at least two separate segments having an n-type conductivity;
- and
- at least two separate segments having a p-type conductivity.
5 more elements
Dependencies are inferred from the claim text.