ESD protection device structure
AssigneeUnited Microelectronics Corp.
InventorChing-Hung Kao
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Abstract
An electrostatic discharge (ESD) protective device structure is disclosed. The ESD protection device includes: at least a first conductive type metal-oxide semiconductor (MOS), in which the drain and source of the first conductive type MOS are electrically connected to a first power terminal and a second power terminal separately; at least a second conductive type diffusion region; and at least a dummy gate disposed between the first conductive type MOS and the second conductive type diffusion region, wherein the gate length of the dummy gate is less than the gate length of the first conductive type MOS gate, such that the junction between the second conductive type diffusion region and the drain of the first conductive type MOS have a low breakdown voltage.
Claims9
An electrostatic discharge (ESD) protection device, wherein the ESD protection device is disposed on a substrate, the ESD protection device comprising:
- at least a first conductive type metal-oxide semiconductor (MOS), wherein the drain and source of the first conductive type MOS are electrically connected to a first power terminal and a second power terminal separately;
- at least a second conductive type diffusion region, wherein the second conductive type diffusion region to be a region wherein is not electrically connected to any voltage source or circuit;
- and
- at least a dummy gate disposed between the first conductive type MOS and the second conductive type diffusion region, wherein the gate length of the dummy gate is less than the gate length of the first conductive type MOS, such that the junction between the second conductive type diffusion region and the drain of the first conductive type MOS have a low breakdown voltage.
Dependencies are inferred from the claim text.