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US 7,842,618 B2Granted
System and method for improving mesa width in a semiconductor device
AssigneesSpansion LLC, Advanced Micro Devices, Inc.
InventorsUnsoon Kim, Angela T. Hui, Yider Wu, Kuo-Tung Chang, Hiroyuki Kinoshita
Life of this patent
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Abstract
A method for forming a memory device is provided. A nitride layer is formed over a substrate. The nitride layer and the substrate are etched to form a trench. The nitride layer is trimmed on opposite sides of the trench to widen the trench within the nitride layer. The trench is filled with an oxide material. The nitride layer is stripped from the memory device, forming a mesa above the trench.
Claims17
A method for forming a memory device, the method comprising:
- forming a nitride layer over a substrate;
- forming a first trench by etching the nitride layer and the substrate;
- trimming the nitride layer on opposite sides of the first trench, where the trimming widens the trench within the nitride layer;
- depositing a photoresist material over the nitride layer after trimming the nitride layer, where the depositing includes filling the first trench with the photoresist material;
- forming a second trench by further etching the nitride layer and the substrate;
- and
- filling the first trench and the second trench with an oxide material.
4 more elements
A method comprising:
- forming a first trench in a nitride layer of a semiconductor device;
- widening the first trench by trimming the nitride layer;
- forming a second trench in the semiconductor device after forming the first trench;
- and
- filling the widened first trench and the second trench with an oxide material without widening the second trench by trimming the nitride layer.
2 more elements
Dependencies are inferred from the claim text.