Low-k b-doped SiC copper diffusion barrier films
AssigneeNovellus Systems, Inc.
InventorsYongsik Yu, Atul Gupta, Karen Billington, Michael Carris, William Crew, Thomas W. Mountsier
Life of this patent
Estimating the term…
Abstract
The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
Claims21
A method of forming a copper diffusion barrier film in a semiconductor device, comprising a copper interconnect, the method comprising:
- forming a copper diffusion barrier film on the copper interconnect, the copper diffusion barrier film comprising a layer of a nitrogen-free boron-doped silicon carbide and a layer of an oxygen-doped silicon carbide forming a stack, wherein forming the copper diffusion barrier film comprises forming the layer of nitrogen-free boron-doped silicon carbide adjacent the copper interconnect and forming the layer of oxygen-doped silicon carbide not in a direct contact with the copper interconnect.
A method of forming a copper diffusion barrier film in a semiconductor device, comprising a copper interconnect, the method comprising:
- forming a copper diffusion barrier film on the copper interconnect, the copper diffusion barrier film comprising a layer of a nitrogen-free boron-doped silicon carbide and a layer of an oxygen-doped silicon carbide forming a stack, wherein forming the copper diffusion barrier film comprises forming the layer of nitrogen-free boron-doped silicon carbide adjacent the copper interconnect;
- forming a nitrogen-doped silicon carbide layer and forming the oxygen-doped silicon carbide layer, wherein the nitrogen-free boron-doped silicon carbide layer, the nitrogen-doped silicon carbide layer and the oxygen-doped silicon carbide layer are compositionally distinct layers.
Dependencies are inferred from the claim text.