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US 7,842,582 B2Granted
Method of forming semiconductor devices
AssigneeHynix Semiconductor Inc.
InventorSoo Jin Kim
Life of this patent
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Abstract
A method of forming semiconductor devices includes providing a semiconductor substrate in which gate insulating patterns and first conductive patterns are formed, performing a first etch process to narrow a width of each of the first conductive patterns, forming an auxiliary layer on the first conductive patterns, the gate insulating patterns, and an exposed surface of the semiconductor substrate, and forming trenches by etching the auxiliary layer and the semiconductor substrate between the first conductive patterns.
Claims23
A method of forming semiconductor devices, comprising:
- providing a semiconductor substrate defining gate insulating patterns and first conductive patterns;
- performing a first etch process to narrow a width of each of the first conductive patterns;
- forming an auxiliary layer on the first conductive patterns, the gate insulating patterns, and an exposed surface of the semiconductor substrate;
- and
- forming trenches by etching the auxiliary layer and the semiconductor substrate between the first conductive patterns.
2 more elements
A method of forming semiconductor devices, comprising:
- providing a semiconductor substrate defining gate insulating patterns and first conductive patterns;
- performing a first etch process to narrow a width of each of the first conductive patterns;
- performing a second etch process to form trenches in the semiconductor substrate exposed along the first conductive patterns each having the narrowed width;
- forming auxiliary patterns on the trenches and the first conductive patterns;
- and
- increasing a depth of each of the trenches, thereby forming isolation regions.
3 more elements
Dependencies are inferred from the claim text.