Method for manufacturing a semiconductor device having doped and undoped polysilicon layers
AssigneeInfineon Technologies AG
InventorsHaoren Zhuang, Matthias Lipinski, Jingyu Lian, Chandrasekhar Sarma
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Abstract
Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.
Claims21
A method for manufacturing a semiconductor device, comprising:
- forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion of the first polysilicon layer disposed directly on an undoped portion of the first polysilicon layer;
- and
- forming a second polysilicon layer directly on a surface of the first polysilicon layer.
A method for manufacturing a semiconductor device, comprising:
- forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a directly on non-doped portion;
- and
- forming a second polysilicon layer directly on a surface of the first polysilicon layer,
- wherein forming the first polysilicon layer comprises forming the first polysilicon layer to have a first thickness, and wherein forming the second polysilicon layer comprises forming the second polysilicon layer to have a second thickness that is equal to or less than the first thickness.
A method for manufacturing a semiconductor device, comprising:
- forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion of the first polysilicon layer disposed directly on an undoped portion of the first polysilicon layer;
- and
- forming a second polysilicon layer directly on the doped portion of the first polysilicon layer.
Dependencies are inferred from the claim text.