Plasma etching method
AssigneeTokyo Electron Limited
InventorAkinori Kitamura
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Abstract
A plasma etching method includes the step of etching a lower organic material film by using an upper organic material film and an intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an O2 gas and a carbon-containing compound gas which has a carbon atom in a molecule, to thereby transfer a pattern of the intermediate layer to the lower organic material film. A ratio of a flow rate of the carbon-containing compound gas to a total flow rate of the etching gas ranges from about 40 to 99%.
Claims18
A plasma etching method for performing an etching on a target object having a lower organic material film, an intermediate layer formed of an inorganic material and an upper organic material film, which are formed on a base layer in that order, the intermediate layer and the upper organic material film being patterned, the method comprising the steps of:
- etching the lower organic material film by using the upper organic material film and the intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture including an O2 gas and a CO gas, to thereby transfer a pattern of the intermediate layer to the lower organic material film, wherein a ratio of a flow rate of the CO gas to a total flow rate of the etching gas ranges from about 40 to 99%;
- and
- etching the base layer including SiO2 by using the lower organic material film and the intermediate layer as a mask.
A plasma etching method for performing an etching on a target object having a lower organic material film, an intermediate layer formed of an inorganic material and an upper organic material film, which are formed on a base layer in that order, the intermediate layer and the upper organic material film being patterned, the method comprising the steps of:
- etching the lower organic material film by using the upper organic material film and the intermediate layer as a mask in a processing chamber of a plasma etching apparatus, while using an etching gas made up of a gaseous mixture, to thereby transfer a pattern of the intermediate layer to the lower organic material film, wherein the gaseous mixture includes an O2 gas and a CH4 gas, and a ratio of a flow rate of the CH4 gas to a total flow rate of the etching gas ranges from about 40 to 99%;
- and
- etching the base layer including SiO2 by using the lower organic material film and the intermediate layer as a mask.
Dependencies are inferred from the claim text.