Semiconductor structures including conductive vias continuously extending therethrough and methods of making the same
AssigneeHewlett-Packard Development Company, L.P.
InventorsTheodore I. Kamins, Philip J. Kuekes
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Abstract
Semiconductor structures are disclosed including a substrate comprising a semiconductor material and having opposed first and second surfaces, and at least one conductive via extending from the first surface to the second surface. The conductive vias can extend at angles relative to the first surface, such as acute angles or 90°. The conductive vias can include segments that extend at different angles. Methods of forming conductive vias in semiconductor structures are provided. In the methods, a thermal gradient is applied in combination with an electric field to form conductive vias.
Claims4
A semiconductor structure, comprising:
- a substrate comprising a semiconductor material and having a first surface and an opposite second surface;
- a first conductive via extending continuously through the substrate from the first surface to the second surface, the first conductive via including at least one first segment extending at a defined first angle of more than 0° relative to the first surface and at least one second segment extending at a defined second angle of more than 0° relative to the first surface, wherein the first angle is different from the second angle;
- and
- at least one of:
- a second conductive via extending continuously through the substrate from the first surface to the second surface at an acute angle defined relative to a perpendicular to the first surface;
- or
- a third conductive via extending continuously through the substrate from the first surface to the second surface substantially perpendicular to the first surface.
Dependencies are inferred from the claim text.