US 7,804,158 B2 · Electronic device with shielding structure and method of manufacturing the same

Abstract

An electronic device includes a substrate, an active circuit, and a shielding structure. The active circuit is formed on the substrate. The shielding structure is disposed surrounding the active circuit, and includes a first heavy ion-doped region, first metal stack, second heavy ion-doped region, second metal stack and top metal. The first heavy ion-doped is formed in the substrate and located at a first side of the active circuit. The first metal stack is formed on the first heavy ion-doped region of the substrate, wherein the first metal stack is connected to a ground voltage. The second heavy ion-doped region is formed in the substrate and located at a second side of the active circuit. The second metal stack is formed on the second heavy ion-doped region of the substrate. The top metal is formed on the first metal stack and second metal stack and passing over the active circuit.

Claims21

Dependent claims

An electronic device, comprising:

a substrate;
an active circuit, formed on the substrate;
and
a shielding structure, disposed surrounding the active circuit for shielding the active circuit from crosstalk, noise and interferences, the shielding structure comprising:
a first heavy ion-doped region, formed in the substrate and located at a first side of the active circuit;
a first metal stack, formed on the first heavy ion-doped region of the substrate, wherein the first metal stack is connected to a ground voltage;
a second heavy ion-doped region, formed in the substrate and located at a second side of the active circuit;
a second metal stack, formed on the second heavy ion-doped region of the substrate;
and
a top metal, formed on the first metal stack and the second metal stack and passing over the active circuit.

7 more elements

A method of manufacturing an electronic device, the electronic device comprising an active circuit, the method comprising:

providing a substrate comprising a region for forming the active circuit;
forming a first heavy ion-doped region and a second heavy ion-doped region in the substrate and respectively at a first side and a second side of the region for forming the active circuit;
forming a first metal stack and a second metal stack together with the active circuit respectively on the first heavy ion-doped region, the second heavy ion-doped region, and the region for forming the active circuit, wherein the first metal stack is connected to a ground voltage;
and
forming a top metal on the first metal stack and the second metal stack to pass over the active circuit.

2 more elements

Dependencies are inferred from the claim text.

Electronic device with shielding structure and method of manufacturing the same

Life of this patent

Electronic device with shielding structure and method of manufacturing the same

Life of this patent

Abstract

Claims21