Semiconductor device comprising planarized light-shielding island films for thin-film transistors
AssigneeSeiko Epson Corporation
InventorHiroaki Jiroku
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Abstract
A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.
Claims7
A semiconductor device comprising:
- a substrate;
- a semiconductor element including a semiconductor film, the semiconductor film having a source region, a channel region and a drain region;
- an island-shaped light shielding film disposed between the semiconductor film and the substrate, the island-shaped light shielding film having an outer edge between the channel region and an outer edge of the source region and another outer edge between the channel region and an outer edge of the drain region, the area of the island-shaped light shielding film being slightly larger than the area of the channel region and being not larger than the area of the semiconductor film;
- a first insulating film around the periphery of the island-shaped light shielding film, the first insulating film being in a non-overlapping condition with the island-shaped light shielding film;
- and
- a second insulating film formed on the first insulating film and the island-shaped light shielding film.
Dependencies are inferred from the claim text.