Crystal imprinting methods for fabricating substrates with thin active silicon layers
AssigneeInternational Business Machines Corporation
InventorsLouis Lu-Chen Hsu, Jack Allan Mandelman, William R. Tonti
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Abstract
Methods of forming semiconductor structures characterized by a thin active silicon layer on an insulating substrate by a crystal imprinting or damascene approach. The methods include patterning an insulating layer to define a plurality of apertures, filling the apertures in the patterned insulating layer with amorphous silicon to define a plurality of amorphous silicon features, and re-growing the amorphous silicon features to define a thin active silicon layer consisting of regrown silicon features. The amorphous silicon features may be regrown such that a number have a first crystal orientation and another number have a different second crystal orientation.
Claims10
A method of fabricating a semiconductor structure on an insulating substrate covered by a insulating layer patterned to define a plurality of apertures, the method comprising:
- filling the apertures in the insulating layer with amorphous silicon to define a plurality of amorphous silicon features;
- contacting each of the amorphous silicon features with a respective one of a plurality of crystal seed regions each having either a first crystal orientation or a second crystal orientation that differs from the first crystal orientation;
- and
- crystallizing the amorphous silicon features to form a plurality of crystalline silicon features of the first crystal orientation using the crystal seed regions of the first crystal orientation as crystal growth seeds for the contacted amorphous silicon regions and a plurality of crystalline silicon features of the second crystal orientation using the crystal seed regions of the second crystal orientation as crystal growth seeds for the contacted amorphous silicon regions.
Dependencies are inferred from the claim text.