Highly integrated semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Min Kim, Eun-Jung Yun
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Abstract
A method of fabricating a semiconductor device includes sequentially forming a first pattern and a second pattern on a substrate, the second pattern being a non-single-crystalline semiconductor stacked on the first pattern, wherein a portion of the substrate is exposed adjacent to the first and second patterns, forming a non-single-crystalline semiconductor layer on the substrate, the semiconductor layer contacting the second pattern and the exposed portion of the substrate, and, using the substrate as a seed layer, changing the crystalline state of the semiconductor layer to be single-crystalline and changing the crystalline state of the second pattern to be single-crystalline.
Claims13
A method of fabricating a semiconductor device, comprising:
- sequentially forming a first pattern and a second pattern on a substrate, the second pattern being a non-single-crystalline semiconductor stacked on the first pattern, wherein a portion of the substrate is exposed adjacent to the first and second patterns;
- forming a non-single-crystalline semiconductor layer on the substrate, the semiconductor layer contacting the second pattern and the exposed portion of the substrate;
- and
- using the substrate as a seed layer, changing the crystalline state of the semiconductor layer to be single-crystalline and changing the crystalline state of the second pattern to be single-crystalline.
Dependencies are inferred from the claim text.