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US 7,803,671 B2Granted
Method of manufacturing a display substrate
AssigneeSamsung Electronics Co., Ltd.
InventorsNam-Seok Roh, Jung-Mok Bae
Life of this patent
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Abstract
A method of manufacturing a display substrate comprises forming a thin-film transistor (TFT) on a silicon wafer, transferring the TFT from the silicon wafer onto a base substrate using a stamp unit and forming a pixel electrode electrically connected to the TFT.
Claims36
A method of manufacturing a display substrate, comprising:
- forming a plurality of thin-film transistors (TFTs) on a silicon wafer;
- separating the TFTs from the silicon wafer using a stamp unit, the stamp unit having a stamp body and a plurality of stamps disposed on a surface of the stamp body and corresponding to the TFTs, the stamps being spaced apart from each other and protruding from the surface of the stamp body;
- transferring the TFT attached to the stamp unit onto a base substrate directly from the stamp unit;
- and
- forming a pixel electrode electrically connected to each of the TFTs.
2 more elements
A method of manufacturing a display substrate, comprising:
- forming a plurality of thin-film transistor (TFTs) on a silicon wafer, the TFTs having a gate electrode, a source electrode, a drain electrode and an electrode protecting film covering the gate electrode, the source electrode and the drain electrode;
- separating the TFTs from the silicon wafer using a stamp unit, the stamp unit having a stamp body and a plurality of stamps disposed on a surface of the stamp body and corresponding to each of the TFTs, the stamps being spaced apart from each other and protruding from the surface of the stamp body;
- transferring the TFTs attached to the stamp unit onto a base substrate using a stamp unit;
- forming a gate line electrically connected to the gate electrode of each of the TFTs;
- forming a data line electrically connected to the source electrode of each of the TFTs;
- and
- forming a pixel electrode electrically connected to the drain electrode of each of the TFTs,
- wherein forming the gate line comprises;
- partially removing the electrode protecting film to partially expose the gate electrode, thereby forming a gate contact hole;
- and
- forming the gate line electrically connected to the gate electrode through the gate contact hole on the electrode protecting film.
8 more elements
Dependencies are inferred from the claim text.