Method of fabricating a mask for a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorSung Hyun Oh
Life of this patent
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Abstract
In a method of fabricating a mask for a semiconductor device, a phase shift layer and a light blocking layer are formed on a transparent substrate. The light blocking layer is patterned to form light blocking patterns which partially expose a surface of the phase shift layer. An extension defect or a bridge defect is detected. A photoresist layer, which does not react to light, is formed on a resulting structure including the detected defect. The extension defect is removed by performing a repair process on the light blocking patterns. The bridge defect is removed by etching using the light blocking patterns as a mask.
Claims11
A method of fabricating a mask for a semiconductor device, the method comprising:
- forming a phase shift layer and a light blocking layer over a transparent substrate;
- forming light blocking patterns by patterning the light blocking layer, wherein the light blocking patterns partially expose a surface of the phase shift layer;
- detecting an extension defect generated when the light blocking patterns are formed;
- preparing a resist layer, wherein the resist layer is a photoresist layer without a photoacid generator;
- depositing the resist layer over the detected extension defect and the light blocking patterns;
- performing a development process over the resist layer to expose a surface of the light blocking patterns by providing a developing solution without exposing process;
- removing the extension defect by performing a repair process on the light blocking patterns, wherein the resist layer covers the phase shift layer through the repair process;
- and
- removing the resist layer.
A method of fabricating a mask for a semiconductor device, the method comprising:
- forming a phase shift layer and a light blocking layer over a transparent substrate;
- forming light blocking patterns by patterning the light blocking layer, wherein the light blocking patterns partially expose a surface of the phase shift layer;
- forming phase shift patterns using the light blocking patterns as an etch mask;
- detecting a bridge defect generated when the phase shift patterns are formed;
- preparing a resist layer, wherein the resist layer is a photoresist layer without a photoacid generator;
- depositing the resist layer over the detected bridge defect and the exposed layers;
- performing a development process over the resist layer to expose a surface of the bridge defect by providing a developing solution without exposing process;
- etching the exposed bridge defect using the light blocking patterns as a mask, wherein the resist layer covers the surface of the transparent substrate through etching the exposed bridge defect;
- and
- removing the resist layer.
Dependencies are inferred from the claim text.