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US 7,803,504 B2Granted
Mask pattern of semiconductor device and manufacturing method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorJun Seok Lee
Life of this patent
Estimating the term…
Abstract
Provided is a mask pattern of a semiconductor device. The mask pattern includes a plurality of main patterns and a plurality of assistance patterns. The main patterns are adjacent to one another. The assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern. The assistance patterns are staggered.
Claims20
A mask pattern, the mask pattern comprising:
- a plurality of main patterns adjacent to one another, each comprising a first pattern and a plurality of second patterns extending perpendicularly from the first pattern, wherein each of the second patterns has a line width less than a line width of the first pattern;
- and
- one or more staggered assistance patterns on each of the second patterns, the assistance patterns having a line width greater than the line width of the second patterns.
A method of manufacturing a mask pattern, the method comprising:
- forming a plurality of main patterns adjacent to one another, each comprising a first pattern and a plurality of second patterns extending perpendicularly from the first pattern, wherein the second patterns have a line width less than a line width of the first pattern;
- and
- forming one or more staggered assistance patterns on each of the second patterns, the assistance patterns having a line width greater than the line width of the second patterns.
Dependencies are inferred from the claim text.