Thermal processing apparatus
AssigneeTokyo Electron Limited
InventorsKazuhiko Ooshima, Shigeki Aoki
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AssigneeTokyo Electron Limited
InventorsKazuhiko Ooshima, Shigeki Aoki
Estimating the term…
A thermal processing apparatus for thermally processing a substrate in a processing chamber includes a heating plate for mounting and thermally processing the substrate thereon, and a lid body covering the heating plate from above to constitute a portion of the processing chamber. The lid body has a ceiling plate and a peripheral side portion vertically provided at a peripheral end portion of the ceiling plate. The ceiling plate is provided with a supply port for supplying a gas into the processing chamber, and a side portion of the ceiling plate is provided with a plurality of exhaust ports for exhausting the gas in the processing chamber. An exhaust pipe communicating with the exhaust ports and having an outlet at a point at equal distances from the exhaust ports is provided to be attachable and detachable to/from the lid body. According to the present invention, the maintenance work against clogging due to the impurities such as a sublimate and the like generated by the thermal processing can be easily performed.
A thermal processing apparatus for thermally processing a substrate in a processing chamber, comprising:
A thermal processing apparatus for thermally processing a substrate in a processing chamber, comprising:
A thermal processing apparatus for thermally processing a substrate in a processing chamber, comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Apparatus for thermal treatment: mainly by convection
Apparatus for manufacture or treatment: apparatus for fluid treatment
Apparatus for manufacturing or treating in a plurality of work-stations: characterised by the construction of the processing chambers, e.g.…
Generic processes or apparatus for the manufacture or treatment of devices covered
About 2 years 1 month of term left · ends 6 Dec 2028 (estimated)
1. Field of the Invention
The present invention relates to a thermal processing apparatus and, more specifically, to a thermal processing apparatus for performing heat processing for a substrate, for example, a semiconductor wafer, an LCD glass substrate or the like.
2. Description of the Related Art
FIG. 1 is a plan view schematically showing a resist coating and developing treatment system in which a thermal processing apparatus according to an embodiment is installed;
FIG. 2 is a front view schematically showing the resist coating and developing treatment system in FIG. 1;
FIG. 3 is a rear view schematically showing the resist coating and developing treatment system in FIG. 1;
Hereinafter, best embodiments of the present invention will be described with reference to the accompanying drawings. A case will be described in which a thermal processing apparatus according to the present invention is applied to a heat processing apparatus in a resist coating and developing treatment system for a semiconductor wafer.
FIG. 1 is a plan view of the resist coating and developing treatment system, FIG. 2 is a front view of FIG. 1, and FIG. 3 is a rear view of FIG. 1.
The primary part of the resist coating and developing treatment system is composed of a cassette station 10 (transfer section) for transferring in or transferring out a plurality of, for example, 25 semiconductor wafers W (hereinafter referred to as wafers W) being substrates, as a unit, in a wafer cassette 1 from/to the outside to/from the system, and transferring-in/out the wafers W from/to the wafer cassette 1; a treatment station 20 comprising treatment and processing apparatuses composed of various kinds of multi-tiered treatment and processing units disposed at predetermined positions for performing, in a single wafer treatment manner, predetermined treatments or processing for the wafers W one by one in the coating and developing steps; and an interface section 30 for passing the wafer W to/from an aligner (not shown) provided adjacent to the treatment station 20.