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US 7,777,607 B2Granted
Resistor having a predetermined temperature coefficient
AssigneeAllegro MicroSystems, LLC
InventorsWilliam P. Taylor, Michael C. Doogue
Life of this patent
Estimating the term…
Abstract
A material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack has a temperature coefficient generally the same as a magnetoresistance element.
Claims12
A material stack comprising:
- an antiferromagnetic layer;
- a first pinned layer disposed over the antiferromagnetic layer;
- a non-magnetic layer disposed over the pinned layer;
- and
- a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance substantially the same in the presence of any magnetic field in any direction relative to the material stack and in the presence of no magnetic field, wherein the electrical resistance has a temperature coefficient about the same as a temperature coefficient of a magnetoresistance element, and wherein the material stack does not include a free layer.
2 more elements
A circuit comprising:
- a magnetoresistance element;
- and
- a material stack coupled to the magnetoresistance element, comprising:
- an antiferromagnetic layer;
- a first pinned layer disposed over the antiferromagnetic layer;
- a non-magnetic layer disposed over the pinned layer;
- and
- a second pinned layer disposed over the non-magnetic layer, wherein the material stack has an electrical resistance substantially the same in the presence of any magnetic field in any direction relative to the material stack and in the presence of no magnetic field, wherein the electrical resistance has a temperature coefficient about the same as a temperature coefficient of the magnetoresistance element, and wherein the material stack does not include a free layer.
5 more elements
Dependencies are inferred from the claim text.