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US 7,777,291 B2Granted
Integrated circuits having interconnects and heat dissipators based on nanostructures
AssigneeSmoltek AB
InventorMohammad Shafiqul Kabir
Life of this patent
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Abstract
The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
Claims26
An integrated circuit, comprising:
- a support;
- a conducting substrate, on the support;
- an interconnect supported by the conducting substrate, wherein the interconnect comprises at least one nanostructure, and wherein the nanostructure comprises:
- a plurality of intermediate layers on the conducting substrate, wherein at least two of the plurality of intermediate layers are interdiffused, and wherein material of the at least two of the plurality of intermediate layers that are interdiffused are present in the nanostructure, the plurality of intermediate layers including at least one layer that affects a morphology of the nanostructure and at least one layer that affects an electrical property of an interface between the conducting substrate and the nanostructure, and wherein at least one of the plurality of intermediate layers comprises material selected from the group consisting of amorphous silicon and germanium.
1 more element
An integrated circuit comprising:
- at least one interconnect comprising a carbon nanostructure, wherein the integrated circuit permits a current density of ≧107 A/cm2 when a current is flowing through it, wherein the carbon nanostructure comprises:
- a plurality of intermediate layers on a conducting substrate, wherein at least two of the plurality of intermediate layers are interdiffused, and wherein material of the at least two of the plurality of intermediate layers that are interdiffused are present in the nanostructure, the plurality of intermediate layers including at least one layer that affects a morphology of the nanostructure and at least one layer that affects an electrical property of an interface between the conducting substrate and the nanostructure, and wherein at least one of the plurality of intermediate layers comprises material selected from the group consisting of amorphous silicon and germanium.
Dependencies are inferred from the claim text.