US 7,772,021 B2Granted

Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays

AssigneeSamsung Electronics Co., Ltd.

InventorsJe-hun Lee, Dong-ju Yang, Tae-hyung Ihn, Do-hyun Kim, Sun-young Hong, Seung-jae Jung, Chang-oh Jeong, Eun-guk Lee

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Abstract

Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Claims14

Dependent claims

A method of fabricating a display substrate having an array of semiconductive oxide thin-film transistors (TFTs), the method comprising:

forming gate wiring on an insulation substrate;
and
stacking a combination of a semiconductive oxide film pattern and data wiring on the gate wiring, wherein said stacking comprises selectively thinning the semiconductive oxide film pattern at channel portions thereof so that the semiconductive oxide film pattern is divided into first regions and correspondingly adjacent second regions, the first regions being substantially thinner than the second regions, and where the data wiring is operatively coupled to the thicker second regions, wherein a ratio of a thickness of a given first region to a thickness of its correspondingly adjacent second region is 0.123 or higher, but less than 1.

Dependencies are inferred from the claim text.