Methods and configurations for manufacturing hinges for micro-mirror devices

A micro-mirror device comprising:

• a plurality of vertical doped semiconductor hinges each including a thin-narrow-plate attached at a top end of a vertical post extended from a substrate, wherein each of the doped semiconductor hinges is composed of a material selected from a group of semiconductors consisting of elemental semiconductors, III-V compound semiconductors, II-VI compound semiconductors, IV compound semiconductors, and alloy semiconductors;
• a supporting platform coupled to each of the hinges for supporting a mirror plate thereon, wherein the mirror supporting platform is composed of an electrically conductive material;
• and
• each of the vertical doped semiconductor hinges comprising at least a cantilever or a torsion structure or a cantilever combined with a torsion structure.

A micromirror device comprising:

• a doped semiconductor hinge including a thin-narrow-plate disposed on a substrate, wherein the doped semiconductor hinge is composed of a material selected from a group of semiconductors consisting of elemental semiconductors, III-V compound semiconductors, II-VI compound semiconductors, IV compound semiconductors, and alloy semiconductors;
• and
• a supporting platform coupled to the hinge for supporting a mirror plate thereon, wherein the mirror supporting platform is composed of an electrically conductive material;
• and wherein the supporting platform has a width substantially same as or narrower than a width of the semiconductor hinge.

A micromirror device comprising:

• a doped semiconductor hinge including a thin-narrow-plate disposed on a substrate, wherein the doped semiconductor hinge is composed of a material selected from a group of semiconductors consisting of elemental semiconductors, III-V compound semiconductors, II-VI compound semiconductors, IV compound semiconductors, and alloy semiconductors;
• a supporting platform coupled to the hinge for supporting a mirror plate thereon, wherein the mirror supporting platform is composed of an electrically conductive material;
• and
• a hinge support connecting to the doped semiconductor hinge and substrate, having a first end disposed near the doped semiconductor hinge and a second end disposed near the substrate wherein the first end has a cross sectional area smaller than a cross sectional area of said second end.

A micromirror device comprising:

• a doped semiconductor hinge including a thin-narrow-plate disposed on a substrate, wherein the doped semiconductor hinge is composed of a material selected from a group of semiconductors consisting of elemental semiconductors, III-V compound semiconductors, II-VI compound semiconductors, IV compound semiconductors, and alloy semiconductors;
• a supporting platform coupled to the hinge for supporting a mirror plate thereon, wherein the mirror supporting platform is composed of an electrically conductive material;
• and
• a hinge support, connecting to the doped semiconductor hinge and extended from said substrate wherein the doped semiconductor hinge further includes a cantilever having a length shorter than a distance between the substrate and the mirror plate.

A projection system comprising:

• an Illumination light source for projecting an illumination beam impinging to a mirror array disposed on a semiconductor substrate wherein mirrors of said mirror array deflecting the light beam for projecting an image;
• each of the mirrors further comprising:
• a vertical doped semiconductor hinge, supporting the mirror, wherein the doped semiconductor hinge is composed of a material selected from a group of materials consisting of a single crystal silicon, poly silicon or amorphous silicon and doped with an doping impurity selected from a group doping impurities consisting of group III elements, group IV elements, group V elements, and group VII elements is introduced into the semiconductor hinge;
• a supporting platform coupled to the hinge for supporting a mirror thereon, wherein the mirror supporting platform is composed of an electrically conductive material;
• each of the vertical doped semiconductor hinges comprising at least a cantilever or a torsion structure or a cantilever combined with a torsion structure;
• and
• a circuit including an electrode disposed on the semiconductor substrate for activating the mirror wherein the mirror is electrically connecting with the circuit through the doped semiconductor hinge.