US 7,746,157 B2Granted

Electric circuit

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsHajime Kimura, Yasuko Watanabe

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Abstract

A transistor has variation in a threshold voltage or mobility due to accumulation of factors such as variation in a gate insulating film which is caused by a difference of a manufacturing process or a substrate to be used and variation in a crystal state of a channel formation region. The present invention provides an electric circuit which is arranged such that both electrodes of a capacitance device can hold a voltage between the gate and the source of a specific transistor. Further, the present invention provides an electric circuit which has a function capable of setting a potential difference between both electrodes of a capacitance device so as to be a threshold voltage of a specific transistor.

Claims13

Dependent claims

A semiconductor device comprising:

a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
and
a capacitor,
wherein:
one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the first wiring is kept at a first potential,
the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
the other of the source and the drain of the second transistor is electrically connected to the first wiring,
one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the fourth transistor,
one of a source and a drain of the fifth transistor is electrically connected to a second wiring, wherein the second wiring is kept at a second potential,
a first electrode of the capacitor is electrically connected to the gate of the first transistor, and
a second electrode of the capacitor is electrically connected to the other of the source and the drain of the fourth transistor.

13 more elements

The semiconductor device comprising:

a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
and
a capacitor,
wherein:
one of a source and a drain of the first transistor is electrically connected to a first wiring, wherein the first wiring is kept at a first potential,
the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the fourth transistor,
a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor,
the other of the source and the drain of the second transistor is electrically connected to the first wiring,
one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the fourth transistor,
one of a source and a drain of the fifth transistor is electrically connected to a second wiring, wherein the second wiring is kept at a second potential,
a first electrode of the capacitor is electrically connected to the gate of the first transistor,
a second electrode of the capacitor is electrically connected to the other of the source and the drain of the fourth transistor,
a source and a drain of the sixth transistor is electrically connected to the other of the source and the drain of the first transistor,
a conduction type of the first transistor is a p-channel type, and
the first potential of the first wiring is lower than the second potential of the second wiring.

17 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/041,042Filed 3 Mar 2008 · continuation
Priority: JP 2001-36348428 Nov 2001
Published: US 2008/0170169 A117 Jul 2008
Granted: 29 Jun 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

G09G 3/3225
Organic, e.g. using organic light-emitting diodes [OLED]: using an active matrix
G09G 3/3648
Control of matrices with row and column drivers: using an active matrix
H03F 3/45076
With semiconductor devices only: characterised by the way of implementation of the active amplifying circuit in the differential amplifier
H03F 3/45179
Characterised by the way of implementation of the active amplifying circuit in the differential amplifier: using MOSFET transistors as the active…

Family

Application10/304,061Parent of this continuation · filed 26 Nov 2002
Application11/197,427Parent of this continuation · filed 5 Aug 2005
US 2008/0170169 A1Pre-grant publication · published 17 Jul 2008
US 7,348,825 B2Parent of this continuation
US 6,927,618 B2Parent of this continuation
US 2003/0174009 A1Published application
US 2006/0044044 A1Published application
US 7,746,157 B2This patent

From the US filing history. Foreign family members aren’t listed.

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