Circuit device, a method for manufacturing a circuit device, and a semiconductor module

A method for manufacturing a circuit device, the method including:

• a first process of forming a conductor on one of surfaces of an insulating layer;
• a second process of forming a first wiring layer on a surface of a substrate on which the circuit device is formed;
• a third process of embedding the conductor in the insulating layer by press-bonding the substrate and the insulating layer in a state where the first wiring layer is in contact with the conductor;
• a fourth process of exposing the conductor from the other surface of the insulating layer;
• and
• a fifth process of providing a second wiring layer in a position, where the conductor is exposed, and on the insulating layer,
• wherein the conductor is formed in such a manner that the length of crystal grains in a direction parallel with the surface of the substrate is larger than the length of crystal grains in a conduction direction of the first wiring layer and the second wiring layer.

A method for manufacturing a circuit device, the method including:

• an embedding process of embedding a conductor in an insulating layer by press-bonding a substrate and the insulating layer in a state where a first wiring layer formed on the surface of the substrate on which the circuit device is formed is in contact with the conductor formed on one of surfaces of the insulating layer;
• an exposing process of exposing the conductor from the other surface of the insulating layer;
• and
• a wiring process of providing a second wiring layer in a position, where the conductor is exposed, and on the insulating layer,
• wherein the conductor is formed in such a manner that the length of crystal grains in a direction parallel with the surface of the substrate is larger than the length of crystal grains in a conduction direction of the first wiring layer and the second wiring layer.