Semiconductor device and method of manufacturing the same
AssigneeNEC Electronics Corporation
InventorsTatsuya Usami, Koichi Ohto, Toshiyuki Takewaki
Life of this patent
Estimating the term…
Abstract
A first gas including a silicon-containing compound is introduced into a vacuum chamber, to expose a semiconductor substrate placed in the chamber to the first gas atmosphere (silicon processing step). Then the pressure inside the vacuum chamber is reduced to a level lower than the pressure at the time of starting the silicon processing step (depressurizing step). Thereafter, a second gas including a nitrogen-containing compound is introduced into the vacuum chamber, and the semiconductor substrate is irradiated with the second gas plasma (nitrogen plasma step).
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate;
- a conductive layer composed essentially of a copper-containing metal, filled in a recessed portion provided in said insulating layer;
- an alloy layer containing copper and silicon, formed in a surface layer of said conductive layer;
- and
- a nitride layer formed by nitriding said insulating layer, in a uniform thickness in a surface layer of said insulating layer, wherein nitrogen is unevenly distributed in the nitride layer.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer provided on said semiconductor substrate, the insulating layer being formed from:
- a first porous film on the substrate,
- a first etch stop layer on the first porous film, a second porous film on the first etch stop layer, and
- a second etch stop layer on the second porous film;
- a conductive layer composed essentially of a copper-containing metal, filled in a recessed portion provided in said insulating layer;
- an alloy layer containing copper and silicon, formed in a surface layer of said conductive layer;
- and
- a nitride layer formed by nitriding said insulating layer, in a uniform thickness in a surface layer of said insulating layer, wherein nitrogen is unevenly distributed in the nitride layer
Dependencies are inferred from the claim text.