Method to create super secondary grain growth in narrow trenches
AssigneeImec
InventorsGerald Beyer, Sywert H. Brongersma
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Abstract
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super secondary grain growth in electrochemically deposited copper in narrow trenches and/or vias to be used in semiconductor devices.
Claims17
A semiconductor device comprising at least one structure selected from the group consisting of a trench and a via, wherein the structure is filled with recrystallized electrochemically deposited copper, wherein at least 80% of said recrystallized electrochemically deposited copper consists of copper grains having a [100] orientation and dimensions of at least 10 microns.
Dependencies are inferred from the claim text.