Integrated circuit and seed layers

An electronic apparatus comprising:

• a first insulating layer above a substrate, the substrate including a first electronic device and a second electronic device;
• a first barrier/adhesion layer on and contacting the first insulating layer, the first insulating layer including conductive paths within the first insulating layer such that the first barrier/adhesion layer is conductively coupled to the first electronic device and to the second electronic device, the first barrier/adhesion layer being a conductive layer;
• a first seed layer on and contacting the first barrier/adhesion layer;
• a first conductive line on the first seed layer;
• a conductive capping layer on and contacting the first conductive line;
• a second barrier/adhesion layer on and contacting the conductive capping layer such that the second barrier/adhesion layer is disposed on and conductively coupled to the first conductive line, the second barrier/adhesion layer being a conductive layer;
• a second seed layer on and contacting the second barrier/adhesion layer;
• a second conductive line on the second seed layer;
• a third barrier/adhesion layer on and contacting the conductive capping layer such that the third barrier/adhesion layer is disposed on and conductively coupled to the first conductive line, the third barrier/adhesion layer being a conductive layer;
• a third seed layer on and contacting the third barrier/adhesion layer;
• a third conductive line on the third seed layer;
• and
• an insulating region separating the second barrier/adhesion layer from the third barrier/adhesion layer.

An electronic apparatus comprising:

• a first insulating layer above a substrate, the substrate including an electronic device;
• a first barrier/adhesion layer having a bottom surface on and contacting the first insulating layer, the first insulating layer including a conductive path within the first insulating layer such that the first barrier/adhesion layer is conductively coupled to the electronic device, the first barrier/adhesion layer being a conductive layer, the first barrier/adhesion layer having a sidewall extending vertically from the bottom surface;
• a first seed layer above and contacting the first barrier/adhesion layer, the first seed layer having a protective layer above and contacting the seed layer such that material of the protective layer is different from material of the seed layer, the material of the protective layer being conductive and selected to protect material of the seed layer from oxidation;
• a first conductive line on the protective layer;
• a second barrier/adhesion layer on and conductively coupled to the first conductive line, the second barrier/adhesion layer being a conductive layer, the second barrier/adhesion layer having a sidewall extending vertically from a top level of the first conductive layer to a level at which the second barrier/adhesion layer has an outward extension that extends outwardly from the sidewall at the level, the outward extension of the second barrier/adhesion layer vertically separated from the first insulating layer by an opening;
• a second seed layer on and contacting the second barrier/adhesion layer;
• and
• a second conductive line on the second seed layer.

A method comprising:

• forming a first insulating layer above a substrate, the substrate including an electronic device;
• forming a first barrier/adhesion layer above and contacting the first insulating layer with the first insulating layer having a conductive path within the first insulating layer such that the first barrier/adhesion layer is conductively coupled to the electronic device, the first barrier/adhesion layer being a conductive layer;
• forming first seed layer above and contacting the first barrier/adhesion layer, the forming of the first seed layer including forming a protective layer above and contacting the seed layer such that material of the protective layer is different from material of the seed layer, the material of the protective layer being conductive and selected to protect material of the seed layer from oxidation;
• forming a first conductive line on the protective layer;
• forming a second baffler/adhesion layer on and conductively coupled to the first conductive line, the second barrier/adhesion layer being a conductive layer;
• forming a second seed layer on and contacting the second barrier/adhesion layer;
• and
• forming a second conductive line on the second seed layer.

A method comprising:

• forming a first insulating layer above a substrate, the substrate including an electronic device;
• forming a first barrier/adhesion layer having a bottom surface above and contacting the first insulating layer, the first insulating layer including a conductive path within the first insulating layer such that the first barrier/adhesion layer is conductively coupled to the electronic device, the first barrier/adhesion layer being a conductive layer, the first barrier/adhesion layer having a sidewall extending vertically from the bottom surface;
• forming a first seed layer above and contacting the first barrier/adhesion layer, the forming of the first seed layer including forming a protective layer above and contacting the seed layer such that material of the protective layer is different from material of the seed layer, the material of the protective layer being conductive and selected to protect material of the seed layer from oxidation;
• forming a first conductive line on the protective layer;
• forming a second barrier/adhesion layer on and conductively coupled to the first conductive line, the second barrier/adhesion layer being a conductive layer, the second barrier/adhesion layer having a sidewall extending vertically from a top level of the first conductive layer to a level at which the second barrier/adhesion layer has an outward extension that extends outwardly from the sidewall at the level, the outward extension of the second barrier/adhesion layer vertically separated from the first insulating layer by an opening;
• forming a second seed layer on and contacting the second barrier/adhesion layer;
• and
• forming a second conductive line on the second seed layer.