Capacitor embedded in interposer, semiconductor device including the same, and method for manufacturing capacitor embedded in interposer

A semiconductor device comprising:

• a capacitor embedded in an interposer;
• and
• a semiconductor integrated circuit element mounted on said capacitor embedded in an interposer,
• wherein
• said capacitor embedded in an interposer includes:
• a base;
• a conductor via embedded in said base and extending through said base from an upper surface to a lower surface;
• a capacitor provided on said base;
• a first wiring coupled to said conductor via;
• a second wiring coupled to an anode of said capacitor;
• a third wiring coupled to a cathode of said capacitor;
• an insulating layer covering said capacitor, said first wiring, said second wiring, and said third wiring;
• a first electrode pad on said insulating layer and coupled to said first wiring;
• a second electrode pad on said insulating layer and coupled to said second wiring;
• a third electrode pad on said insulating layer and coupled to said third wiring;
• a fourth wiring covered by said insulating layer;
• a fourth electrode pad on said insulating layer and coupled to one end of said fourth wiring;
• and
• a fifth electrode pad coupled to the other end of said fourth wiring to which one end of a wire is bonded,
• potentials are respectively applied from above said base to said anode and cathode,
• said semiconductor integrated circuit element includes:
• a signal terminal coupled to said first electrode pad;
• a power supply terminal coupled to said second electrode pad;
• a grounding terminal coupled to said third electrode pad;
• and
• a second signal terminal coupled to said fourth electrode pad, and
• a speed at which a signal is transmitted through said wire is lower than a speed at which a signal is transmitted through said conductor via.