Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, and antimony
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorsFrank Fuchs, Robert Rehm, Martin Walther
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Abstract
A Semiconductor component that contains AlxGayIn1-x-yAszSb1-z, whereby the parameters x, y, and z are selected such that a bandgap of less than 350 meV is achieved, whereby it features a mesa-structuring and a passivation layer containing AlnGa1-nAsmSb1-m is applied at least partially on at least one lateral surface of the structuring, and the parameter n is selected in the range of 0.4 to 1 and the parameter m in the range of 0 to 1.
Claims32
A semiconductor component comprising AlxGayIn1-x-yAszSb1-z, wherein parameters x, y, and z are selected to achieve a bandgap of less than 350 meV, the component comprising:
- a mesa-structuring comprising an active region;
- and
- a passivation layer comprising AlnGa1-nAsmSb1-m applied at least partially on at least one lateral surface of the mesa structuring, wherein the parameter n is selectable within a range of 0.5 to 0.85 and the parameter m is selectable within a range of 0 to 1.
A method for the production of a semiconductor component comprising:
- producing at least one active semiconductor region of an AlxGa1-nIn1-x-yAszSb1-z-containing material with a bandgap of less than 350 meV;
- forming mesa structures in the at least one active semiconductor region;
- applying a passivation layer containing AlnGa1-nAsmSb1-m on at least one lateral surface of the mesa structures, whereby parameter n is selectable in a range of 0.5 to 0.85 and the parameter m is selectable in a range of 0 to 1.
A semiconductor component comprising AlxGayIn1-x-yAszSb1-z, wherein parameters x, y, and z are selected to achieve a bandgap of less than 350 meV, the component comprising:
- a flat-structuring;
- and
- a passivation layer comprising AlnGa1-nAsmSb1-m being applied to at least partially cover the flat-structuring, wherein the parameter n is selectable within a range of 0.5 to 0.85 and the parameter m is selectable within a range of 0 to 1.
A semiconductor component comprising AlxGayIn1-x-yAszSb1-z, wherein parameters x, y, and z are selected to achieve a bandgap of less than 350 meV, the component comprising:
- a mesa-structuring comprising an active region;
- and
- a passivation layer comprising AlnGa1-nAsmSb1-m applied at least partially on at least one lateral surface of the mesa structuring, wherein the parameter n is selectable within a range of 0.5 to 0.85 and the parameter m is selectable within a range of 0 to 0.15.
Dependencies are inferred from the claim text.