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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hsin Ko, Chung-Hu Ke, Chien-Chao Huang
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A semiconductor device provides a transistor adjacent an isolation trench. The device may be formed by producing isolation trenches in a semiconductor substrate, filling the trenches with a filler material, creating voids near top edges of the trenches and annealing by a gaseous ambient to reflow the edges of the trenches causing the edges to become rounded and overhang the trench. The filler material may be a dielectric. The transistors which are then formed in close proximity to the trenches may include source/drain regions formed in the rounded portion of the semiconductor substrate that overhangs the trench.
A semiconductor device comprising a transistor formed on a semiconductor substrate and between a duality of opposed isolation trenches formed in the semiconductor substrate, each isolation trench filled with a dielectric, the transistor including a channel region formed within a section of the substrate surface, a gate structure overlying the channel region, and a source region and a drain region formed within the substrate adjacent opposed ends of the channel region and in a corresponding substrate portion that overhangs the corresponding isolation trench such that the drain region overhangs only one isolation trench and the source region overhangs only the other isolation trench, the substrate portion having a completely and continuously curved upper surface, wherein the completely and continuously curved upper surface of the substrate portion is entirely disposed at a height below a top planar surface of the dielectric.
Dependencies are inferred from the claim text.