Image sensor and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorSang Wook Ryu
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Abstract
An image sensor and method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, a metal interconnection layer, a light-receiving unit, a lens-type upper electrode, and a color filter. The semiconductor substrate can include a circuit region. The metal interconnection layer can include a metal interconnection and an interlayer dielectric. The light-receiving unit can be a photodiode disposed on the metal interconnection layer. The lens-type upper electrode can be disposed on the light-receiving unit and formed in a convex lens shape. The color filter can be disposed on the lens-type upper electrode.
Claims16
An image sensor, comprising:
- a semiconductor substrate having a complementary metal oxide semiconductor (CMOS) circuit formed thereon;
- a metal interconnection layer including a metal interconnection and an interlayer dielectric on the semiconductor substrate including the CMOS circuit;
- a light-receiving unit on the metal interconnection layer;
- and
- an upper electrode on the light-receiving unit, the upper electrode being formed having a convex lens shape.
A method of manufacturing an image sensor, comprising:
- forming a complementary metal oxide semiconductor (CMOS) circuit on a semiconductor substrate;
- forming a metal interconnection layer including metal interconnections and an interlayer dielectric on the semiconductor substrate, the metal interconnections providing connections for the CMOS circuit;
- forming a light-receiving unit on the metal interconnection layer;
- and
- forming a lens-type upper electrode on the light-receiving unit.
Dependencies are inferred from the claim text.