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US 7,745,887 B2Granted
Dual work function metal gate structure and related method of manufacture
AssigneeSamsung Electronics Co., Ltd.
InventorsMin-Joo Kim, Hyung-Suk Jung, Jong-Ho Lee, Sungkee Han
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Abstract
A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and/or fluorine.
Claims22
A semiconductor device, comprising at least one of:
- a NMOS metal gate structure comprising a first metal gate electrode formed from a metal layer doped with fluorine to have a first work function;
- and,
- a PMOS metal gate structure comprising a second metal gate electrode formed from the metal layer doped with carbon to have a second work function.
The semiconductor device, comprising:
- NMOS and PMOS active regions formed in a substrate;
- a gate insulating layer formed on the substrate over the NMOS and PMOS active regions;
- a NMOS metal gate structure formed on the gate insulating layer over the NMOS active region and comprising a first metal gate electrode formed from a metal layer and doped with fluorine to have a first work function;
- and,
- a PMOS metal gate structure formed on the gate insulating layer over the PMOS active region and comprising a second metal gate electrode formed from the metal layer and having a second work function greater than the first work function.
2 more elements
The semiconductor device, comprising:
- NMOS and PMOS active regions formed in a substrate;
- a gate insulating layer formed on the substrate over the NMOS and PMOS active regions;
- a PMOS metal gate structure formed on the gate insulating layer over the PMOS active region and comprising a first metal gate electrode formed from a metal layer and doped with carbon to have a first work function;
- and,
- a NMOS metal gate structure formed on the gate insulating layer over the NMOS active region and comprising a second metal gate electrode formed from the metal layer and having a second work function less than the first work function.
2 more elements
Dependencies are inferred from the claim text.