Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element

A thin film capacitance element, comprising a lower portion electrode, a dielectric thin film including a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface, and an upper portion electrode are successively formed on the substrate, wherein:

• the bismuth layer compound is composed of a thin film capacitance element composition;
• the bismuth layer compound is expressed by a composition formula of SrBi4Ti4O15;
• Bi in the bismuth layer compound is excessively included with respect to said composition formula of SrBi4Ti4O15, and the excessive content of Bi is in a range of 0<Bi<2.0 mol in terms of Bi;
• a c-axis orientation degree of the bismuth layer compound is 80% or higher;
• and
• the lower portion electrode is oriented in a [100] direction.

A thin film capacitance element, comprising a lower portion electrode, a dielectric thin film including a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface, and an upper portion electrode are successively formed on the substrate, wherein:

• the bismuth layer compound is composed of a thin film capacitance element composition;
• the bismuth layer compound is expressed by a composition formula of SrBi4Ti4O15;
• Bi in the bismuth layer compound is excessively included with respect to said composition formula of SrBi4Ti4O15, and when the excessive content of Bi is expressed by a mole ratio (Bi/Ti) against Ti, Bi/Ti is in a range of 1<Bi/Ti<1.5;
• a c-axis orientation degree of the bismuth layer compound is 80% or higher;
• and
• the lower portion electrode is oriented in a [100] direction.

A thin film capacitance element, comprising a lower portion electrode, a dielectric thin film including a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface, and an upper portion electrode are successively formed on the substrate, wherein:

• the bismuth layer compound is composed of a thin film capacitance element composition;
• the bismuth layer compound is expressed by a composition formula of SrxCayBazBi4Ti4O16, x+y+z=1, 0≦x≦1, 0≦y≦, and 0≦z≦1;
• and
• Bi in the bismuth layer compound is excessively included with respect to said composition formula of SrxCayBazBi4Ti4O15, and when the excessive content of Bi is expressed by a mole ratio (Bi/Ti) against Ti, Bi/Ti is in a range of 1<Bi/Ti<1.5;
• a c-axis orientation degree of the bismuth layer compound is 80% or higher;
• and
• the lower portion electrode is oriented in a [100] direction.

A thin film multilayer capacitor, comprising a plurality of dielectric thin films comprising a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface and internal electrode thin films alternately stacked on a substrate, wherein:

• the bismuth layer compound is composed of a thin film capacitance element composition;
• the bismuth layer compound is expressed by a composition formula of (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3m+3, wherein:
• “m” is an even number,
• “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca, and Bi, and
• “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W;
• Bi in said bismuth layer compound is excessively included with respect to said composition formula of (Bi2O2)2+(Am−1BmO3m+1)2− or Bi2Am−1BmO3m+3, and the excessive content of Bi is in a range of 0<Bi<0.5×m mol in terms of Bi;
• a c-axis orientation degree of the bismuth layer compound is 80% or higher;
• and
• the internal electrode thin films are oriented in a [100] direction.