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US 7,745,862 B2Granted
CMOS image sensor and method for manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorHyun Joon Sohn
Life of this patent
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Abstract
A CMOS image sensor and a method for manufacturing the same improves photosensitivity and prevent loss of light by forming a photo-sensing unit under a color filter. The CMOS image sensor may include a plurality of transistors formed on a semiconductor substrate, a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors, and a plurality of photodiodes electrically connected with the plurality of transistors and formed over the metal line.
Claims7
A CMOS image sensor comprising:
- a plurality of transistors formed on a semiconductor substrate;
- a metal line formed over the plurality of transistors for electrically connecting the plurality of transistors;
- a plurality of photodiodes electrically connected with the transistors and formed over the metal line;
- a color filter formed on the plurality of photodiodes;
- a planarization layer formed on the color filter;
- and
- a micro-lens formed on the planarization layer.
4 more elements
Dependencies are inferred from the claim text.