Photodiodes and image sensors including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsGi-bum Kim, Taek Kim
Life of this patent
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Abstract
Example embodiments may provide a photodiode formed of semiconductor silicide and/or an image sensor using a photodiode formed of semiconductor silicide. The photodiode may have a p-n junction structure including a p-type semiconductor silicide and an n-type semiconductor silicide. The image sensor may include a substrate, a photodetector unit having the photodiode, which may perform photoelectric transformation, and/or a signal transmitter transmitting a signal generated by the photodetector unit to an output unit. The photodetector unit and/or the signal transmitter may be integrated in the substrate.
Claims9
A photodiode comprising:
- a p-type semiconductor silicide;
- an n-type semiconductor silicide that forms a p-n junction structure with the p-type semiconductor silicide;
- and
- an intrinsic layer between the p-type semiconductor silicide and the n-type semiconductor silicide so as to form a PIN structure,
- wherein the intrinsic layer includes insulating amorphous silicon (a-Si).
An image sensor comprising:
- a substrate;
- a photodiode including a p-type semiconductor silicide and an n-type semiconductor silicide that forms a p-n junction structure with the p-type semiconductor silicide;
- and
- a signal transmitter in the substrate, the signal transmitter being configured to transmit a signal generated by the photodiode to an output unit.
Dependencies are inferred from the claim text.