Solid-state image sensing apparatus and fabrication method thereof

A solid-state image sensing apparatus comprising:

• first and second signal storage portions of a second conductivity type provided within a semiconductor substrate or a well each of a first conductivity type to store a signal charge obtained through a photoelectric conversion;
• a first surface shield layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located above the first signal storage portion;
• a second surface shield layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located above the second signal storage portion;
• a first gate electrode provided over the semiconductor substrate or the well in adjacent relation to at least one end of the first signal storage portion;
• a second gate electrode provided over the semiconductor substrate or the well in adjacent relation to at least one end of the second signal storage portion;
• a drain region of the second conductivity type provided in a surface portion of the semiconductor substrate or the well which is located between the first gate electrode and the second gate electrode;
• a first read control layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located under the first gate electrode in adjacent relation to one end of the first surface shield layer;
• and
• a second read control layer of the first conductivity type provided in a surface portion of the semiconductor substrate or the well which is located below the second gate electrode in adjacent relation to one end of the second surface shield layer,
• wherein the first signal storage portion overlaps the entire first gate electrode and at least a part of the drain region, and
• the second signal storage portion overlaps the entire second gate electrode and at least a part of the drain region.