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US 7,745,851 B2Granted
Polytype hetero-interface high electron mobility device and method of making
AssigneeCree, Inc.
InventorChristopher Harris
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Abstract
A high electron mobility device and method of making is provided whereby a two-dimensional electron gas is formed at a hetero-junction or hetero-interface between different polytypes of a semiconductor material. The different crystal forms or polytypes of the semiconductor material having different electronic bandgaps are used to provide the bandgap necessary to form the two-dimensional electron gas.
Claims11
A high electron mobility device comprising:
- a substrate of semiconductor material;
- a first layer of a first polytype of the semiconductor material on the substrate, the first layer being an off-axis layer and having a narrow mesa region that extends from a first main surface of the first layer;
- a regrown layer of the first polytype over the narrow mesa region, the regrown layer having an on-axis surface over a top surface of the narrow mesa region;
- a source region in the regrown layer over a first sidewall of the narrow mesa region;
- a drain region in the regrown layer over a second sidewall of the narrow mesa region;
- and
- a second layer of a second polytype of the semiconductor material on the regrown layer, wherein a hetero-interface is formed between the regrown layer and the second layer over the top surface of the narrow mesa region,
- wherein the second layer over the top surface of the narrow mesa region is substantially a single crystal domain of the second polytype.
5 more elements
Dependencies are inferred from the claim text.