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US 7,745,849 B2Granted
Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain
AssigneeInternational Rectifier Corporation
InventorMichael A. Briere
Life of this patent
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Abstract
An enhancement mode III-nitride heterojunction device that includes a region between the gate and the drain electrode thereof that is at the same potential as the source electrode thereof when the device is operating.
Claims18
A power semiconductor device comprising:
- a III-nitride heterojunction that includes one III-nitride body over another III-nitride body, said one III-nitride body and said another III-nitride body having different bandgaps, whereby a two-dimensional electron gas is generated inside said III-nitride heterojunction;
- a source electrode and a drain electrode both disposed over and coupled to said III-nitride heterojunction;
- a gate electrode coupled to said III-nitride heterojunction;
- a negatively charged region formed in said III-nitride heterojunction directly under said gate electrode;
- and
- a field plate coupled to said III-nitride heterojunction and disposed completely between said gate electrode and said drain electrode, wherein said field plate is electrically coupled to said source electrode, whereby said field plate is at the same potential as said source electrode when said device is operating.
3 more elements
A driver circuit that includes a III-nitride power semiconductor device, said III-nitride power semiconductor device comprising:
- a III-nitride heterojunction that includes one III-nitride body over another III-nitride body, said one III-nitride body and said another III-nitride body having different bandgaps, whereby a two-dimensional electron gas is generated inside said III-nitride heterojunction;
- a source electrode and a drain electrode both disposed over and coupled to said III-nitride heterojunction;
- a gate electrode coupled to said III-nitride heterojunction;
- a negatively charged region formed in said III-nitride heterojunction directly under said gate electrode;
- and
- a field plate coupled to said III-nitride heterojunction and disposed completely between said gate electrode and said drain electrode, wherein said field plate is electrically coupled to said source electrode, whereby said field plate is at the same potential as said source electrode when said device is operating.
3 more elements
Dependencies are inferred from the claim text.