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US 7,745,848 B1Granted
Gallium nitride material devices and thermal designs thereof
AssigneeNitronex Corporation
InventorsPradeep Rajagopal, Chul H. Park, Craig E. Strautin
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Abstract
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
Claims16
A gallium nitride material device comprising:
- a plurality of transistors, the transistors comprising:
- a gallium nitride material region;
- a source electrode, a drain electrode and a gate electrode associated with the gallium nitride material region,
- wherein an active region is defined in the gallium nitride material region between an edge of the source electrode closest to the gate electrode and an edge of the drain electrode closest the gate electrode,
- the device including a via that surrounds at least the active region of at least one transistor.
2 more elements
A method of producing a gallium nitride material device comprising:
- providing a plurality of transistors, the transistors comprising:
- a gallium nitride material region;
- a source electrode, a drain electrode and a gate electrode associated with the gallium nitride material region,
- wherein an active region is defined in the gallium nitride material region between an edge of the source electrode closest to the gate electrode and an edge of the drain electrode closest the gate electrode,
- providing at least one via that surrounds at least the active region of at least one transistor.
2 more elements
Dependencies are inferred from the claim text.