Integrated low leakage schottky diode

A diode having an anode and a cathode comprising:

• a metal portion of a Schottky barrier junction coupled to said anode;
• an insulated gate having one side thereof adjacent said metal portion and having an electrode electrically coupled to said anode, said insulated gate positioned between said metal portion and said cathode;
• a first layer of a first conductivity type in contact with said cathode;
• a plurality of regions of a second conductivity type opposite said first conductivity type which are connected together and coupled to said anode, wherein at least one of said plurality of regions is in contact with said first layer;
• and
• a second layer of said first conductivity type coupled to said anode and in contact with at least one of said plurality of regions;
• wherein said second layer forms a collector, said at least one of said plurality of regions forms a base, and said first layer forms an emitter of a parasitic NPN transistor.

A diode having an anode and a cathode comprising:

• a metal portion of a Schottky barrier junction coupled to said anode or said cathode;
• an insulated gate having one side thereof adjacent said metal portion and having an electrode electrically coupled to said metal portion;
• a first end of a drift region adjacent an opposite side of said gate with a second end of said drift region coupled to said cathode if said metal portion is connected to said anode, and to said anode if said metal portion is connected to said cathode;
• and
• a layer having a substantially flat upper surface in contact with said metal portion and said gate oxide and extending into said drift region.

A diode having an anode and a cathode comprising:

• a metal portion of a Schottky barrier junction coupled to said anode or said cathode;
• an insulated gate with a split level gate oxide, said insulated gate having one side thereof adjacent said metal portion and having an electrode electrically coupled to said metal portion;
• and
• a first end of a drift region adjacent an opposite side of said gate with a second end of said drift region coupled to said cathode if said metal portion is connected to said anode, and to said anode if said metal portion is connected to said cathode.

A method of forming a diode having an anode and a cathode comprising:

• forming a metal portion of a Schottky barrier junction that is coupled to said anode or said cathode;
• forming an insulated gate having one side thereof adjacent said metal portion and having an electrode electrically coupled to said metal portion;
• forming a concave-shaped conduction channel under said insulated gate;
• and
• forming a first end of a drift region adjacent an opposite side of said gate with a second end of said drift region coupled to said cathode if said metal portion is connected to said anode, and to said anode if said metal portion is connected to said cathode.