Semiconductor light emitting device and fabrication method of the same

A semiconductor light emitting device, comprising:

• a multi-layer light emitting structure, the multi-layer light emitting structure comprising a transparent conductive layer with a first thermal conductivity;
• and
• a heat conducting layer with a second thermal conductivity, the heat conducting layer being formed on the transparent conductive layer;
• wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer.

A semiconductor light emitting device, comprising:

• a multi-layer light emitting structure, the multi-layer light emitting structure comprising a first layer with a first thermal conductivity;
• and
• a heat conducting layer with a second thermal conductivity under the first layer;
• wherein the second thermal conductivity is greater than the first thermal conductivity, and the material of the heat conducting layer comprises a periodic structure stacked alternatively with a diamond layer and an ITO layer.