Memory device

A memory device comprising:

• a first and second memory element portions each comprising:
• a first conductive film;
• an insulating film formed over the first conductive film, the insulating film having an opening and a contact hole;
• and
• a second conductive film formed over the insulating film, in the opening and in the contact hole,
• wherein the insulating film exists between the first conductive film and the second conductive film formed in the opening,
• wherein the first conductive film and the second conductive film are electrically connected in the contact hole, and
• wherein a resistance value of the first and second memory element portions are different from each other.

A memory device comprising:

• a first and second memory element portions each comprising:
• a thin film transistor formed over a substrate;
• a first insulating film formed over the thin film transistor;
• a first conductive film formed over the first insulating film;
• a second insulating film formed over the first conductive film, the second insulating film having an opening;
• and
• a second conductive film formed over the second insulating film and in the opening,
• wherein the second insulating film exists between the first conductive film and the second conductive film formed in the opening,
• wherein a resistance value of the first and second memory element portions are different from each other, and
• wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted.

A memory device comprising:

• a first and second memory element portions each comprising:
• a thin film transistor formed over a substrate;
• a first insulating film formed over the thin film transistor;
• a first conductive film formed over the first insulating film;
• a second insulating film formed over the first conductive film, the second insulating film having an opening and a contact hole;
• and
• a second conductive film formed over the second insulating film, in the opening and in the contact hole,
• wherein the second insulating film exists between the first conductive film and the second conductive film formed in the opening,
• wherein a resistance value of the first and second memory element portions are different from each other, and
• wherein the first conductive film and the second conductive film are electrically connected in the contact hole.

A memory device comprising:

• a base insulating film formed over a substrate;
• a semiconductor film having at least a first impurity region and a second impurity region formed over the base insulating film;
• a gate insulating film formed over the semiconductor film;
• a gate electrode formed over the gate insulating film;
• an insulating film formed over the gate electrode;
• a first conductive film formed over the insulating film and an opening formed in the insulating film;
• and
• a second conductive film formed over the insulating film and a contact hole formed in the insulating film,
• wherein the insulating film exists between the first impurity region and the first conductive film formed in the opening, and
• wherein the second impurity region and the second conductive film are electrically connected in the contact hole.

A memory device comprising:

• a first and second memory element portions each comprising:
• a first conductive film;
• an insulating film formed over the first conductive film, the insulating film having an opening;
• and
• a second conductive film formed over the insulating film and in the opening,
• wherein the insulating film exists between the first conductive film and the second conductive film formed in the opening,
• wherein the first conductive film and the second conductive film in one of the first and second memory element portions are shorted in the opening.