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US 7,745,824 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
Estimating the term…
Abstract
In a semiconductor device and a method of manufacturing the semiconductor device, the source wires 126 of a pixel portion 205 are formed of material having low resistance (representatively, aluminum, silver, copper). The source wires of a driving circuit are formed in the same process as the gate wires 162 of the pixel portion and a pixel electrode 163.
Claims14
A semiconductor device comprising:
- a first n-channel type TFT provided in a pixel;
- a second n-channel type TFT provided in a driving circuit;
- and
- a third n-channel type TFT provided in said driving circuit,
- wherein the gate electrode of said first n-channel type TFT has a laminate structure comprising a first conductive layer and a second conductive layer provided over the first conductive layer,
- wherein the first conductive layer of the gate electrode of said first n-channel type TFT has a substantially rectangular cross-sectional shape,
- wherein the first conductive layer of the gate electrode of said first n-channel type TFT has a same width as a width of a bottom of the second conductive layer of the gate electrode of said first n-channel type TFT,
- wherein and the gate electrode of each of said second and third n-channel type TFTs has a laminate structure comprising a first conductive layer having a first width as a lower layer and a second conductive layer having a second width smaller than the first width as an upper layer, and
- wherein a source wire connected with said first n-channel type TFT is provided across a pixel portion comprising said pixel and comprises at least one material selected from the group consisting of Cu and Ag.
6 more elements
A liquid crystal device comprising:
- a first n-channel type TFT provided in a pixel;
- a second n-channel type TFT provided in a driving circuit;
- and
- a third n-channel type TFT provided in said driving circuit,
- wherein the gate electrode of said first n-channel type TFT has a laminate structure comprising a first conductive layer and a second conductive layer provided over the first conductive layer,
- wherein the first conductive layer of the gate electrode of said first n-channel type TFT has a substantially rectangular cross-sectional shape,
- wherein the first conductive layer of the gate electrode of said first n-channel type TFT has a same width as a width of a bottom of the second conductive layer of the gate electrode of said first n-channel type TFT,
- wherein the gate electrode of each of said second and third n-channel type TFTs has a laminate structure comprising a first conductive layer having a first width as a lower layer and a second conductive layer having a second width smaller than the first width as an upper layer, and
- wherein a source wire connected with said first n-channel type TFT is provided across a pixel portion comprising said pixel and comprises at least one material selected from the group consisting of Cu and Ag.
6 more elements
A liquid crystal device comprising:
- a first n-channel type TFT provided in a pixel;
- a second n-channel type TFT provided in a source side driving circuit;
- and
- a third n-channel type TFT provided in said source side driving circuit,
- wherein the gate electrode of said first n-channel type TFT has a laminate structure comprising a second conductive layer and a first conductive layer having the same width as said second conductive layer, and the gate electrode of each of said second and third n-channel type TFTs has a laminate structure comprising a first conductive layer having a first width as a lower layer and a second conductive layer having a second width smaller than the first width as an upper layer, and
- wherein a source wire connected with said source side driving circuit and said first n-channel type TFT is provided across a pixel portion comprising said pixel and comprises at least one material selected from the group consisting of Cu and Ag.
3 more elements
Dependencies are inferred from the claim text.