Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
AssigneeEastman Kodak Company
InventorsShiying Zheng, Deepak Shukla, Diane C. Freeman
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Abstract
A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.
Claims14
An article comprising, in a thin film transistor, a thin film of organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds selected from the group consisting of compounds represented by the following structures:
- wherein Ar1 and Ar2 are the same or different, and are each carbocyclic or heterocyclic aromatic ring systems, comprising 4 to 60 carbon atoms, fused to each corresponding adjacent imidazole in the structure, wherein each of Ar1, and Ar2 are substituted with at least one or more fluorine atoms, and X is an optional organic or inorganic substituent group at any available position on the core nucleus;
- n is zero or an integer from 1 to 8 and m is zero or an integer from 1 to 4,
- wherein the thin film transistor further comprises first and second contact means in spaced apart contact with the thin film and third contact means spaced apart from the organic semiconductor material.
Dependencies are inferred from the claim text.