Negative differential resistance polymer devices and circuits incorporating same
AssigneeThe Ohio State University
InventorsPaul R. Berger, Woo-Jun Yoon
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AssigneeThe Ohio State University
InventorsPaul R. Berger, Woo-Jun Yoon
Estimating the term…
A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.
A device comprising:
A device comprising first and second negative differential resistance polymer diodes electrically connected in series to define a latching or memory element having at least two stable states, each negative differential resistance polymer diode including:
A device comprising:
Dependencies are inferred from the claim text.