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US 7,745,814 B2Granted
Polychromatic LED's and related semiconductor devices
Assignee3M Innovative Properties Company
InventorsThomas J. Miller, Michael A. Haase, Xiaoguang Sun
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Assignee3M Innovative Properties Company
InventorsThomas J. Miller, Michael A. Haase, Xiaoguang Sun
Estimating the term…
A semiconductor device is provided comprising a first potential well located within a pn junction and a second potential well not located within a pn junction. The potential wells may be quantum wells. The semiconductor device is typically an LED, and may be a white or near-white light LED. The semiconductor device may additionally comprise a third potential well not located within a pn junction. The semiconductor device may additionally comprise absorbing layers surrounding or closely or immediately adjacent to the second or third quantum wells. In addition, graphic display devices and illumination devices comprising the semiconductor device according to the present invention are provided.
A semiconductor device comprising a first potential well located within a pn junction that emits light at a first wavelength when the pn junction is biased, a second potential well that emits light at a second wavelength in response to an absorption of at least a portion of light at the first wavelength, and a first absorbing layer closely adjacent to the second potential well and having a band gap energy less than or equal to a first transition energy of the first potential well and greater than a second transition energy of the second potential well.
Dependencies are inferred from the claim text.