Nanostructures and methods for manufacturing the same

A layered structure comprising:

• a single crystal, epitaxial layer of a second crystalline material grown on a surface of a substrate of a first crystalline material, the second crystalline material being different from the first crystalline material;
• wherein:
• a plurality of nanowhiskers of the second crystalline material extend from the surface of the substrate in the epitaxial layer of the second crystalline material;
• the plurality of nanowhiskers constitute nucleation sites for the epitaxial layer of the second crystalline material;
• the entire epitaxial layer of the second crystalline material contains substantially no misfit dislocations, grain boundaries or antiphase domains;
• the plurality of nanowhiskers and the epitaxial layer of the second crystalline material comprise a same III-V semiconductor material;
• the substrate of the first crystalline material comprises a crystalline silicon substrate;
• the substrate comprises a crystalline silicon (100) substrate;
• and
• the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.

A structure comprising a plurality of crystalline III-V semiconductor nanowhiskers grown on a surface of a silicon substrate, wherein each entire nanowhisker of the plurality of nanowhiskers contains no misfit dislocations or antiphase domains,

• wherein:
• the substrate comprises a crystalline silicon (100) substrate;
• and
• the surface of the substrate comprises a (111) silicon surface exposed in V-shaped grooves in the substrate.