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US 7,745,812 B2Granted
Integrated circuit including vertical diode
AssigneeQimonda North America Corp.
InventorsThomas Happ, Jan Boris Philipp
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes a vertical diode defined by crossed line lithography.
Claims22
An integrated circuit comprising:
- a vertical diode;
- a silicide contact contacting the vertical diode;
- a first electrode coupled to the silicide contact;
- a spacer having a first sidewall contacting a first sidewall of the first electrode;
- a resistivity changing material coupled to the first electrode;
- and
- a second electrode coupled to the resistivity changing material,
- wherein a second sidewall of the spacer is aligned on a line with a sidewall of the vertical diode and a second sidewall of the first electrode.
5 more elements
An integrated circuit comprising:
- a vertical diode including a first polarity region and a second polarity region;
- a silicide contact contacting the second polarity region;
- a first electrode coupled to the silicide contact;
- a spacer having a first sidewall contacting a first sidewall of the first electrode;
- a phase change element coupled to the first electrode;
- and
- a second electrode coupled to the phase change element,
- wherein a second sidewall of the spacer is aligned on a line with a second sidewall of the first electrode and a sidewall of the vertical diode.
5 more elements
An integrated circuit comprising:
- a first polarity region;
- a second polarity region contacting the first polarity region;
- a silicide contact contacting the second polarity region;
- a first electrode coupled to the silicide contact;
- a spacer having a first sidewall contacting a first sidewall of the first electrode;
- a resistive memory element coupled to the first electrode;
- and
- a second electrode coupled to the resistive memory element,
- wherein a second sidewall of the spacer is aligned on a line with a second sidewall of the first electrode, a sidewall of the silicide contact, a sidewall of the second polarity region, and a sidewall of the first polarity region.
6 more elements
An integrated circuit comprising:
- a vertical diode;
- a silicide contact contacting the vertical diode;
- a first electrode coupled to the silicide contact, the first electrode having a first sidewall aligned in a line with a first sidewall of the silicide contact;
- and the first electrode having a second sidewall aligned in a line with a second sidewall of the silicide contact;
- a spacer having a first sidewall contacting a third sidewall of the first electrode;
- a resistivity changing material coupled to the first electrode;
- and
- a second electrode coupled to the resistivity changing material,
- wherein a second sidewall of the spacer is aligned on a line with a sidewall of the vertical diode and the second sidewall of the first electrode.
6 more elements
Dependencies are inferred from the claim text.